T/NXCL 29-2024
300 mm low oxygen content single crystaline Czochralski silicon polished wafers (English Version)
- Standard No.
- T/NXCL 29-2024
- Language
- Chinese, Available in English version
- Release Date
- 2024
- Published By
- Group Standards of the People's Republic of China
- Lastest
- T/NXCL 29-2024
- Scope
- This document specifies the terms and definitions, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, quality certificate, order (or contract) content and quality of 300mm low oxygen content Czochralski single crystal polished wafers commitments, etc. This document is applicable to silicon single crystal polished wafers with a diameter of 300mm and low oxygen content Czochralski silicon single crystal grinding wafers prepared by single-sided or double-sided polishing. The product is mainly used to meet the technical needs of power devices such as insulated gate bipolar transistors (IGBT). of substrate.
T/NXCL 29-2024 history
- 2024 T/NXCL 29-2024 300 mm low oxygen content single crystaline Czochralski silicon polished wafers