T/IAWBS 020-2024
Test method for deep level defects of silicon carbide epitaxial layers-Transient capacitance method (English Version)
- Standard No.
- T/IAWBS 020-2024
- Language
- Chinese, Available in English version
- Release Date
- 2024
- Published By
- Group Standards of the People's Republic of China
- Lastest
- T/IAWBS 020-2024
- Scope
- This document specifies a method for measuring deep level defects in silicon carbide (SiC) epitaxial materials using deep level transient spectroscopy in transient capacitance technology. This document is suitable for measuring the deep energy levels produced by impurities and defects in the silicon carbide epitaxial material layer in the semiconductor bandgap. This method can obtain parameters such as activation energy, concentration, and capture cross-section of deep energy levels.
T/IAWBS 020-2024 history
- 2024 T/IAWBS 020-2024 Test method for deep level defects of silicon carbide epitaxial layers-Transient capacitance method