GB/T 43493.3-2023
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects (English Version)
- Standard No.
- GB/T 43493.3-2023
- Language
- Chinese, Available in English version
- Release Date
- 2023
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Lastest
- GB/T 43493.3-2023
GB/T 43493.3-2023 history
- 2023 GB/T 43493.3-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects
GB/T 43493.3-2023 -All Parts
GB/T 43493.1-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 1: Defect classification
GB/T 43493.2-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects
GB/T 43493.3-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects