ICS 29.045
Semiconducting materials
Standards in This Category
EVS-EN IEC 60146-1-1:2024
Semiconductor converters - General requirements and line commutated converters - Part 1-1: Specification of basic requirements
MSZ IEC/TR 60146-1-2:2024
MSZT
Semiconductor converters. General requirements and line commutated converters. Part 1-2: Application guidelines
MSZ EN 60146-1-1:2010
MSZT
Semiconductor converters. General requirements and line commutated converters. Part 1-1: Specification of basic requirements (IEC 60146-1-1:2009)
GB/T 47404-2026
GB
Silicon Carbide Single Crystal
This technical specification outlines the classification, technical requirements, test methods, and inspection rules for silicon carbide single crystals. It addresses critical parameters such as
KS L 1619(2023 Confirm)(2023)
KATS
Testing methods for resistivity of conductive fine ceramic thin films with four point probe array
This technical specification outlines a systematic procedure for determining the electrical resistivity of conductive ceramic thin films utilizing an array of four-point probes. The methodology
KS L 1620(2023 Confirm)(2023)
KATS
Test methods for measuring resistivity of electrically conductive ceramic thin films with Van der Pauw method
This technical specification outlines a standardized procedure for determining the electrical resistivity of conductive ceramic thin films utilizing the van der Pauw method. The approach provides a
YS/T 1825-2025
YS
Standardized Tetramethylsilane for Integrated Circuits
YS/T 1829-2025
YS
Multicrystalline silicon material for zone melting
YS/T 1828-2025
YS
Diffusion Film for Doping Semiconductor Materials
MSZ EN IEC 60146-1-1:2024
MSZT
Semiconductor converters. General requirements and line commutated converters. Part 1-1: Specification of basic requirements (IEC 60146-1-1:2024)
KS D 0267(2006)
KATS
Estimation of Boron Content in Silicon
This technical document outlines a standardized analytical procedure for determining the concentration of boron within silicon materials. The methodology employs a specific chemical approach to
GB/T 26071-2026
GB
Silicon single crystals and silicon single crystal wafers for solar cells
This standard establishes technical requirements and testing methods for silicon single crystals and silicon wafers used in solar cells. It covers specifications for material composition, dimensional
GB/T 35305-2026
GB
Gallium Arsenide Single Crystals and Polished Wafers for Solar Cells
This standard provides specifications for the production and quality requirements of gallium arsenide single crystals and polished wafers used in solar cells. It outlines the technical parameters,
GB/T 47097-2026
GB
Aluminum Nitride Single Crystal Polished Wafer
This standard provides specifications for the production and testing of polished single crystal aluminum nitride substrates. It outlines the requirements for material composition, dimensions, surface
GB/T 30858-2025
GB
Sapphire Monocrystalline Substrate Polishing Wafer
This standard outlines the specifications for blue sapphire single crystal substrates used in polishing processes. It provides detailed requirements regarding material composition, surface quality,
T/ZSA 231-2024
TUANTI
X-ray double crystal rocking curve half-width testing method for single crystal gallium oxide wafers
This technical specification establishes a systematic approach for evaluating the crystalline quality of beta-gallium oxide single crystals through X-ray diffraction techniques. The document outlines
GB/T 30856-2025
GB
LED epitaxial wafers using gallium arsenide substrate
This standard provides specifications for the application of gallium arsenide substrates in the production of LED epitaxial chips. It outlines the requirements for material composition, dimensional
GB/T 25074-2025
GB
Solar-grade polycrystalline silicon
This standard establishes specifications for solar-grade polycrystalline silicon, focusing on material properties and testing methods. It outlines requirements for purity, structural characteristics,
KS D 0265-1989(2024)
KATS
Measurement of minority carrier life time in germanium by photoconductive decay method
This standard outlines the methodology for determining the minority carrier lifetime in germanium using the photoconductivity decay technique. It provides detailed procedures for conducting
KS D 0266-1989(2024)
KATS
Determination of conductivity type in germanium by thermoelectromotive method method
This standard provides detailed procedures for determining the conductivity type of germanium using the thermoelectric method. It outlines the necessary equipment, experimental setup, and measurement