Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

2Scope / Description

This standard specifies the following categories of field-effect transistors: Type A: Junction Field-Effect Transistor (JFET); Type B: Insulated-Gate Depletion-Type (Normal On) Field-Effect Transistor; Type C: Insulated-Gate Enhancement-Type (Normal Off) Field-Effect Transistor. Because field-effect transistors may have one or more gates, the following classifications exist: Field-Effect Devices (one source, one drain, one or more gates); Devices with one or more P-channels (Junction Devices, Schottky Barrier Gate Devices); Devices with one or more N-channels (Insulated-Gate Devices, including MESFET, MODFET, HEMT, MOSFET, and other Insulated-Gate FETs; Schottky Barrier Gate Devices; Insulated-Gate Devices, including MOSFETs and other Insulated-Gate FETs). Note 1: Schottky barrier gate and insulated-gate devices include depletion-type and enhancement-type devices. Note 2: MOSFETs for certain applications may not have reverse diode characteristics in the datasheet. Special circuit element structures are being developed to eliminate the body diode in such applications. MOSFET applications such as motor control equipment require the specification of reverse diode characteristics in the MOSFET for use as a freewheeling diode. Note 3: This standard uses only the graphic symbol for Type C. This standard also applies to P-channel devices as well as type A and B devices.