Semiconductor devices; discrete devices; part 7: bipolar transistors; section one: blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification

IEC 60747-7-1:1989 — Semiconductor devices; discrete devices; part 7: bipolar transistors; section one: blank detail specification for ambient-rated bipolar transistors for low and high-frequency amplification is an international standard developed by International Electrotechnical Commission (IEC). The blank detail specification described includes mechanical description, categories of assessed quality, limiting values, electrical characteristics, marking, ordering information, test conditions and inspection requirements. To be used with IEC...

This standard covers: The blank detail specification described includes mechanical description, categories of assessed quality, limiting values, electrical characteristics, marking, ordering information, test conditions and inspection requirements. To be used with IEC Publica

This standard is intended for organizations, professionals, and stakeholders involved in various industries and sectors. It is applicable to manufacturers, service providers, regulatory bodies, and certification organizations.

The current published version is IEC 60747-7-1:1989, published on 1989-03. Always check for amendments or pending revisions.

You can purchase IEC 60747-7-1:1989 by visiting our contact page. Click "Get This Standard" to view pricing and send a purchase inquiry. Our team will respond with payment and delivery details.