BS IEC 60747-8-4:2004
BSI · 2004-11-09

Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

1Key Takeaways

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.

2Scope / Description

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.

3Version History

5Citation Network

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Referenced herein
IEC 60747-1:1983 IEC 60747-2:2000 IEC 60747-7:2000 IEC 60747-8:2000 IEC 60747-9:1998

6Frequently Asked Questions

What is BS IEC 60747-8-4:2004?
BS IEC 60747-8-4:2004 — Discrete semiconductor devices - Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications is an international standard developed by British Standards Institution (BSI). Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
What does BS IEC 60747-8-4:2004 cover?
This standard covers: Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.
Who should use this standard?
This standard is intended for organizations, professionals, and stakeholders involved in various industries and sectors. It is applicable to manufacturers, service providers, regulatory bodies, and certification organizations.
What is the latest version of BS IEC 60747-8-4:2004?
The current published version is BS IEC 60747-8-4:2004, published on 2004-11-09. Always check for amendments or pending revisions.
How do I purchase BS IEC 60747-8-4:2004?
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