IEC 60749-34:2010
IEC · 2010-10

Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling

ICS 31.080.01 Cited by 6

1Key Takeaways

This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward conduction (load curre…

2Scope / Description

This part of IEC 60749 describes a test method used to determine the resistance of a
semiconductor device to thermal and mechanical stresses due to cycling the power
dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage
operating biases for forward conduction (load currents) are periodically applied and
removed, causing rapid changes of temperature. The power cycling test is intended to
simulate typical applications in power electronics and is complementary to high temperature
operating life (see IEC 60749-23). Exposure to this test may not induce the same failure
mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature
using the two-fluid-baths method. This test causes wear-out and is considered destructive.
NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.

3Version History

IEC 60749-34:2004 older 2004-03
IEC 60749-34:2005 older 2005-11
IEC 60749-34:2010 2010-10

4Standard Metadata

Standard Number
IEC 60749-34:2010
Status
Current (70% confidence)
Publisher
International Electrotechnical Commission (IEC)
Publication Date
2010-10
Implementation
2010-10-01
ICS Classification
31.080.01 (Semiconductor devices in general) 

5Citation Network

6
Cite this standard
5
Referenced herein
Standards that cite IEC 60749-34:2010
Semiconductor devices Part 6 : Discrete devices — Thyristors Semiconductor devices - Part 2: Discrete devices - Rectifier diodes General specification for semiconductor discrete devices for aerospace applications Semiconductor devices - Discrete devices. Isolated power semiconductor devices Semiconductor devices - Part 15: Discrete devices - Isolated power semiconductor devices Semiconductor devices - Part 6: Thyristors
Referenced by IEC 60749-34:2010
IEC 60747-1:2006 IEC 60747-2:2000 IEC 60747-6:2000 IEC 60749-23 IEC 60749-3

6Frequently Asked Questions

What is IEC 60749-34:2010?
IEC 60749-34:2010 — Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling is an international standard developed by International Electrotechnical Commission (IEC). This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens...
What does IEC 60749-34:2010 cover?
This standard covers: This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward...
Who should use this standard?
This standard is intended for organizations, professionals, and stakeholders involved in various industries and sectors. It is applicable to manufacturers, service providers, regulatory bodies, and certification organizations.
What is the latest version of IEC 60749-34:2010?
The current published version is IEC 60749-34:2010, published on 2010-10. Always check for amendments or pending revisions.
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